Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates
文献类型：期刊论文
| 作者 | Li HX ; Zhuang QD ; Wang ZG ; Daniels-Race T |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 87期号:1页码:188-191 |
| 关键词 | MOLECULAR-BEAM-EPITAXY STRAINED ISLANDS DEPOSITION EVOLUTION MATRIX |
| ISSN号 | 0021-8979 |
| 通讯作者 | li hx,duke univ,dept elect & comp engn,box 90291,durham,nc 27708 usa. 电子邮箱地址: hxli@ee.duke.edu |
| 中文摘要 | inxga1-xas self-organized quantum dots with x=1.0, 0.5, and 0.35 have been grown by molecular beam epitaxy. the areal density, distribution, and shapes have been found to be dependent on x. the dot shape changes from a round shape for x=1.0 to an elliptical shape for x less than or equal to 0.5. the major axis and minor axis of the elliptical inxga1-xas dots are along the [(1) over bar 10] and [110] directions, respectively. the ordering phenomenon is also discussed. it is suggested that the dot-dot interaction may play important roles in the self-organization process. (c) 2000 american institute of physics. [s0021-8979(00)10701-7]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12744]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li HX,Zhuang QD,Wang ZG,et al. Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates[J]. journal of applied physics,2000,87(1):188-191. |
| APA | Li HX,Zhuang QD,Wang ZG,&Daniels-Race T.(2000).Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates.journal of applied physics,87(1),188-191. |
| MLA | Li HX,et al."Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates".journal of applied physics 87.1(2000):188-191. |
入库方式： OAI收割
来源：半导体研究所
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