Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li LH ; Pan Z ; Zhang W ; Lin YW ; Zhou ZQ ; Wu RH |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 87期号:1页码:245-248 |
| 关键词 | BAND-GAP ENERGY SUPERLATTICES DEPENDENCE ALLOYS GAASN |
| ISSN号 | 0021-8979 |
| 通讯作者 | li lh,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the effect of rapid thermal annealing (rta) on the optical properties of ganxas1-x/gaas strained single quantum well (sqw) was studied by low-temperature photoluminescence (pl). the ganxas1-x/gaas sqw structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. pl measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of rta. the annealing temperature and time were varied from 650 to 850 degrees c and 30 s to 15 min, respectively. remarkable improvements of the optical properties of the samples were observed after rta under optimum conditions. the interdiffusion constants have been calculated by taking into account error function diffusion and solving the schrodinger equation. the estimated interdiffusion constants d are 10(-17)-10(-16) cm(2)/s for the earlier annealing conditions. activation energies of 6-7 ev are obtained by fitting the temperature dependence of the interdiffusion constants. (c) 2000 american institute of physics. [s0021-8979(00)10401-3]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12746]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li LH,Pan Z,Zhang W,et al. Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy[J]. journal of applied physics,2000,87(1):245-248. |
| APA | Li LH,Pan Z,Zhang W,Lin YW,Zhou ZQ,&Wu RH.(2000).Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy.journal of applied physics,87(1),245-248. |
| MLA | Li LH,et al."Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy".journal of applied physics 87.1(2000):245-248. |
入库方式： OAI收割
来源：半导体研究所
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