Photovoltaic effect of cubic GaN/GaAs(100)
文献类型：期刊论文
| 作者 | Jiang DS ; Zhao DG; Yang H; Yang H; Li JB
|
| 刊名 | applied physics letters
 |
| 出版日期 | 1999 |
| 卷号 | 75期号:24页码:3823-3825 |
| 关键词 | GAN |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhao dg,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have studied the photovoltaic effect in cubic gan on gaas at room temperature. the photovoltaic spectra of cubic gan epitaxial film were concealed by the photovoltaic effect from the gaas substrate unless additional illumination of a 632.8 nm he-ne laser beam was used to remove the interference of the gaas absorption in the measurement. on the basis of the near-band-edge photovoltaic spectra of cubic gan, we obtained the minority carrier diffusion lengths of about 0.32 and 0.14 mu m for two undoped n-type cubic gan samples with background concentrations of 10(14) and 10(18) cm(-3), respectively. (c) 1999 american institute of physics. [s0003-6951(99)00450-7]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12748]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS,Zhao DG,Yang H,et al. Photovoltaic effect of cubic GaN/GaAs(100)[J]. applied physics letters,1999,75(24):3823-3825. |
| APA | Jiang DS,Zhao DG,Yang H,Yang H,&Li JB.(1999).Photovoltaic effect of cubic GaN/GaAs(100).applied physics letters,75(24),3823-3825. |
| MLA | Jiang DS,et al."Photovoltaic effect of cubic GaN/GaAs(100)".applied physics letters 75.24(1999):3823-3825. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。