Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes
文献类型：期刊论文
| 作者 | Liu Y ; Xiao XR ; Zeng YP ; Pan D |
| 刊名 | journal of physical chemistry b
 |
| 出版日期 | 1999 |
| 卷号 | 103期号:47页码:10421-10424 |
| 关键词 | MATCHED SUPERLATTICE ELECTRODES PHOTOCURRENT SPECTROSCOPY INTERFACIAL BEHAVIOR SOLAR-CELLS EER SPECTRA PHOTOLUMINESCENCE ELECTRODE/ELECTROLYTE SEMICONDUCTOR TRANSPORT DYNAMICS |
| ISSN号 | 1089-5647 |
| 通讯作者 | xiao xr,chinese acad sci,inst chem,ctr mol sci,lab photochem,beijing 100083,peoples r china. |
| 中文摘要 | the photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface in0.15ga0.85as/gaas quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. the photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. these dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12752]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Y,Xiao XR,Zeng YP,et al. Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes[J]. journal of physical chemistry b,1999,103(47):10421-10424. |
| APA | Liu Y,Xiao XR,Zeng YP,&Pan D.(1999).Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes.journal of physical chemistry b,103(47),10421-10424. |
| MLA | Liu Y,et al."Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes".journal of physical chemistry b 103.47(1999):10421-10424. |
入库方式： OAI收割
来源：半导体研究所
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