Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of materials science & technology
 |
| 出版日期 | 1999 |
| 卷号 | 15期号:6页码:523-526 |
| 关键词 | INAS ISLANDS MONOLAYER COVERAGE SELF-ORGANIZATION ROOM-TEMPERATURE SURFACES |
| ISSN号 | 1005-0302 |
| 通讯作者 | jiang wh,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | the deposition of inxga1-xas (0.2 less than or equal to x less than or equal to 0.5) on (311)b gaas surfaces using solid source molecular beam epitaxy (mbe) has been studied. both afm and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)b gaas surface when indium composition was around 0.4. indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. compared with other surface orientation, (100) and (n11) a/b (n=1,2,3), photoluminescence measurement confirmed that (311)b surface is the most advantageous in fabricating uniform and dense quantum dots. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12760]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy[J]. journal of materials science & technology,1999,15(6):523-526. |
| APA | Xu B.(1999).Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy.journal of materials science & technology,15(6),523-526. |
| MLA | Xu B."Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy".journal of materials science & technology 15.6(1999):523-526. |
入库方式： OAI收割
来源：半导体研究所
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