Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP
文献类型：期刊论文
| 作者 | Fung S ; Zhao YW ; Beling CD ; Xu XL ; Gong M ; Sun NF ; Sun TN ; Chen XD ; Zhang RG ; Liu SL ; Yang GY ; Qian JJ ; Sun MF ; Liu XL |
| 刊名 | applied physics letters
 |
| 出版日期 | 1998 |
| 卷号 | 73期号:9页码:1275-1277 |
| 关键词 | SEMICONDUCTORS HYDROGEN DEFECTS MECHANISM |
| ISSN号 | 0003-6951 |
| 通讯作者 | fung s,univ hong kong,dept phys,hong kong,peoples r china. |
| 中文摘要 | the concentration of hydroen-indium vacancy complex vinh4 in liquid encapsulated czochralski undoped and fe-doped n-type inp has been studied by low-temperature infrared absorption spectroscopy. the vinh4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to similar to 10(16) cm(-3) in as-grown liquid encapsulated czochralski inp. the concentration of the vinh4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of walukiewicz [w. walukiewicz, phys. rev. b 37, 4760 (1998); appl. phys. lett. 54, 2094 (1989)], which predicts a fermi-level-dependent concentration of amphoteric defects. (c) 1998 american institute of physics, [s0003-6951(98)04435-0]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12768]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fung S,Zhao YW,Beling CD,et al. Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP[J]. applied physics letters,1998,73(9):1275-1277. |
| APA | Fung S.,Zhao YW.,Beling CD.,Xu XL.,Gong M.,...&Liu XL.(1998).Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP.applied physics letters,73(9),1275-1277. |
| MLA | Fung S,et al."Compensation ratio-dependent concentration of a VInH4 complex in n-type liquid encapsulated Czochralski InP".applied physics letters 73.9(1998):1275-1277. |
入库方式： OAI收割
来源：半导体研究所
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