Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing
文献类型：期刊论文
| 作者 | Fan TW ; Mo QW ; Lin F ; Wang ZG ; Zhang W |
| 刊名 | applied physics letters
 |
| 出版日期 | 1999 |
| 卷号 | 75期号:19页码:2951-2953 |
| ISSN号 | 0003-6951 |
| 关键词 | MOLECULAR-BEAM EPITAXY QUANTUM DOTS OPTICAL-PROPERTIES LUMINESCENCE GROWTH |
| 通讯作者 | fan tw,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | the formation of arsenic clusters in a system of vertically aligned inas quantum islands on gaas during thermal annealing under as overpressure has been investigated by transmission electron microscopy (tem) and raman scattering. semicoherent arsenic clusters, identified by tem examination, have been formed on the surface of the gaas capping layer. the existence of arsenic precipitates is also confirmed by raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). these peaks have been ascribed to a(1g) and e-g raman active phonons of crystalline arsenic. the phenomenon can be understood by a model of strain-induced selected growth under as overpressure. (c) 1999 american institute of physics. [s0003-6951(99)02045-8]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12770]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fan TW,Mo QW,Lin F,et al. Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing[J]. applied physics letters,1999,75(19):2951-2953. |
| APA | Fan TW,Mo QW,Lin F,Wang ZG,&Zhang W.(1999).Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing.applied physics letters,75(19),2951-2953. |
| MLA | Fan TW,et al."Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing".applied physics letters 75.19(1999):2951-2953. |
入库方式： OAI收割
来源：半导体研究所
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