Outer space grown semi-insulating GaAs and its applications
文献类型：期刊论文
| 作者 | Lin LY ; Zhang MA ; Zhong XG ; Yamada M ; Chen NF |
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 1999 |
| 卷号 | 42期号:5页码:456-461 |
| 关键词 | GaAs outer-space microgravity integrated-circuit DEFECTS STOICHIOMETRY SEMIINSULATING GALLIUM-ARSENIDE |
| ISSN号 | 1006-9321 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | gaas single crystal has been grown in recoverable satellite. hall measurements indicate that the gaas shows semi-insulating behavior. the structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. the stoichiometry and its distribution in space-grown gaas are improved greatly compared with the gaas single crystal grown terrestrially. the properties of integrated circuits made by direct ion-implantation on space-grown gaas are better than those made on ground-grown materials. these results show that the stoichiometry in semi-insulating gaas seriously affects the properties of related devices. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12772]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lin LY,Zhang MA,Zhong XG,et al. Outer space grown semi-insulating GaAs and its applications[J]. science in china series e-technological sciences,1999,42(5):456-461. |
| APA | Lin LY,Zhang MA,Zhong XG,Yamada M,&Chen NF.(1999).Outer space grown semi-insulating GaAs and its applications.science in china series e-technological sciences,42(5),456-461. |
| MLA | Lin LY,et al."Outer space grown semi-insulating GaAs and its applications".science in china series e-technological sciences 42.5(1999):456-461. |
入库方式： OAI收割
来源：半导体研究所
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