中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

文献类型:期刊论文

作者Chen B ; Wang W ; Wang XJ ; Zhang JY ; Fan Z
刊名japanese journal of applied physics part 1-regular papers short notes & review papers
出版日期1999
卷号38期号:9a页码:5096-5100
关键词fiber communication AlGaInAs/InP distributed feedback laser diodes complex-coupled grating strained-compensated LP-MOCVD TEMPERATURE
ISSN号0021-4922
通讯作者chen b,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china.
中文摘要a 1.3-mu m algainas/inp buried heterostructure (bh) stripe distributed feedback laser with a novel alinas/inp complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (lp-mocvd) is proposed and demonstrated. a high characteristic temperature (t-0 = 90k between 20-80 degrees c) and temperature-insensitive slope efficiency (0.25 db drop from 20 to 80 degrees c) in 1.3 mu m algainas/inp dfb lasers was obtained by introducing ai(ga)inas graded-index separate-confinement heterostructure (grinsch) layers and a strained-compensated (sc) multi-quantum well (mqw).
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12784]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen B,Wang W,Wang XJ,et al. A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,1999,38(9a):5096-5100.
APA Chen B,Wang W,Wang XJ,Zhang JY,&Fan Z.(1999).A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode.japanese journal of applied physics part 1-regular papers short notes & review papers,38(9a),5096-5100.
MLA Chen B,et al."A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode".japanese journal of applied physics part 1-regular papers short notes & review papers 38.9a(1999):5096-5100.

入库方式: OAI收割

来源:半导体研究所

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