Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices
文献类型：期刊论文
| 作者 | Wang JN ; Sun BQ ; Wang XR ; Wang HL |
| 刊名 | solid state communications
 |
| 出版日期 | 1999 |
| 卷号 | 112期号:7页码:371-374 |
| 关键词 | semiconductors tunneling ELECTRIC-FIELD DOMAINS DOPED SEMICONDUCTOR SUPERLATTICES MODEL INSTABILITIES DIODES GAAS-ALAS SUPERLATTICES |
| ISSN号 | 0038-1098 |
| 通讯作者 | wang jn,hong kong univ sci & technol,dept phys,hong kong,peoples r china. |
| 中文摘要 | we investigate the transition from static to dynamic electric field domains (efds) in a doped gaas/alas superlattice (sl). we show that a transverse magnetic field and/or the temperature can induce current self-oscillations. this observation can be attributed to the negative differential resistance (ndr) effect. transverse magnetic field and the temperature can increase the ndr of a doped sl. a large ndr can lead to an unstable efd in a certain range of d.c. bias. (c) 1999 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12788]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JN,Sun BQ,Wang XR,et al. Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices[J]. solid state communications,1999,112(7):371-374. |
| APA | Wang JN,Sun BQ,Wang XR,&Wang HL.(1999).Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices.solid state communications,112(7),371-374. |
| MLA | Wang JN,et al."Negative differential resistance and the transition to current self-oscillation in GaAs/AlAs superlattices".solid state communications 112.7(1999):371-374. |
入库方式： OAI收割
来源：半导体研究所
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