High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Yang GW ; Hwu RJ ; Xu ZT ; Ma XY |
| 刊名 | ieee journal of quantum electronics
 |
| 出版日期 | 1999 |
| 卷号 | 35期号:10页码:1535-1541 |
| 关键词 | quantum-well lasers semiconductor diodes semiconductor epitaxial layers semiconductor lasers semiconductor materials NM DIODE-LASERS WAVE-GUIDE AMPLIFIER FRONT-FACET POWER |
| ISSN号 | 0018-9197 |
| 通讯作者 | yang gw,univ utah,dept elect engn,salt lake city,ut 84112 usa. |
| 中文摘要 | we report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an al-free ingaas-ingaasp active region and algaas cladding layers. the use of algaas cladding instead of ingap provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. the as-grown ingaas-ingaasp(1.6 ev)-algaas(1.95 ev) lasers achieve a low threshold current density of 150 a/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). both broad-area and ridge-waveguide laser devices are fabricated. for 100-mu m-wide stripe lasers with a cavity length of 800 irm, a slope efficiency of 1.05 w/a and a characteristic temperature coefficient (t-0) of 230 k are achieved. the lifetime test demonstrates a reliable performance. the comparison with our fabricated ingaas-ingaasp(1.6 ev)-algaas(1.87 ev) lasers and al-free ingaas-ingaasp (1.6 ev)-ingap lasers are also given and discussed. the selective etching between algaas and ingaasp is successfully used for the formation of a ridge-waveguide structure. for 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mw is achieved. the fundamental mode output power can be up to 190 mw with a slope efficiency as high as 0.94 w/a. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12796]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang GW,Hwu RJ,Xu ZT,et al. High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition[J]. ieee journal of quantum electronics,1999,35(10):1535-1541. |
| APA | Yang GW,Hwu RJ,Xu ZT,&Ma XY.(1999).High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition.ieee journal of quantum electronics,35(10),1535-1541. |
| MLA | Yang GW,et al."High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition".ieee journal of quantum electronics 35.10(1999):1535-1541. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。