Effect of Si doping on cubic GaN films grown on GaAs(100)
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 206期号:1-2页码:150-154 |
| ISSN号 | 0022-0248 |
| 关键词 | GaN cubic hexagonal photoluminescence XRD DOPED GAN SILICON SEMICONDUCTORS SAPPHIRE LIGHT-EMITTING DIODES |
| 通讯作者 | xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china. |
| 中文摘要 | epitaxial layers of cubic gan have been grown by metalorganic vapor-phase epitaxy (movpe) with si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). si-doping decreased the yellow emission of gan. however, the heavily doped n-type material has been found to induce phase transformation. as the si-doping concentration increases, the hexagonal gan nanoparticles increase. judged from the linewidth of x-ray rocking curve, si-doping increases the density of dislocations and stacking faults. based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy si-doping. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12804]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Effect of Si doping on cubic GaN films grown on GaAs(100)[J]. journal of crystal growth,1999,206(1-2):150-154. |
| APA | Zhao DG.(1999).Effect of Si doping on cubic GaN films grown on GaAs(100).journal of crystal growth,206(1-2),150-154. |
| MLA | Zhao DG."Effect of Si doping on cubic GaN films grown on GaAs(100)".journal of crystal growth 206.1-2(1999):150-154. |
入库方式： OAI收割
来源：半导体研究所
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