Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Ye XL ; Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 205期号:4页码:607-612 |
| 关键词 | quantum dots InGaAs/InGaAlAs adjusting layer molecular beam epitaxy high index GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | jiang wh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in this paper, ingaas quantum dots with an adjusting ingaalas layer underneath are grown on (n 1 1)a/b (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. small and dense ingaas quantum dots are formed on (1 0 0) and (n 1 1)b substrates. a comparative study by atomic force microscopy shows that the alignment and uniformity for ingaas quantum dots are greatly improved on(5 1 1)b but deteriorated on (3 1 1)b surface, demonstrating the great influence of the buried ingaalas layer. there is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. quantum dots formed on (3 1 1)a and (5 1 1)a surfaces are large and random in distribution, and no emission from these dots can be detected. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12808]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy[J]. journal of crystal growth,1999,205(4):607-612. |
| APA | Ye XL,&Xu B.(1999).Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy.journal of crystal growth,205(4),607-612. |
| MLA | Ye XL,et al."Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy".journal of crystal growth 205.4(1999):607-612. |
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来源：半导体研究所
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