中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Self-organization of wire-like InAs nanostructures on InP

文献类型:期刊论文

作者Li HX ; Zhuang QD ; Kong XW ; Wang ZG ; Daniels-Race T
刊名journal of crystal growth
出版日期1999
卷号205期号:4页码:613-617
ISSN号0022-0248
关键词quantum wires InAs/InP molecular beam epitaxy self-organization MOLECULAR-BEAM EPITAXY
通讯作者li hx,duke univ,dept elect & comp engn,durham,nc 27708 usa.
中文摘要the initial inas growth on inp(1 0 0) during molecular beam epitaxy has been investigated. the as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer inas deposition range. the wires were oriented along the [(1) over bar 1 0] direction. transmission electron microscopy images confirm that the wires are coherently grown on the substrates. our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized inas nanowires. (c) 1999 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12810]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li HX,Zhuang QD,Kong XW,et al. Self-organization of wire-like InAs nanostructures on InP[J]. journal of crystal growth,1999,205(4):613-617.
APA Li HX,Zhuang QD,Kong XW,Wang ZG,&Daniels-Race T.(1999).Self-organization of wire-like InAs nanostructures on InP.journal of crystal growth,205(4),613-617.
MLA Li HX,et al."Self-organization of wire-like InAs nanostructures on InP".journal of crystal growth 205.4(1999):613-617.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。