Self-organization of wire-like InAs nanostructures on InP
文献类型:期刊论文
作者 | Li HX ; Zhuang QD ; Kong XW ; Wang ZG ; Daniels-Race T |
刊名 | journal of crystal growth |
出版日期 | 1999 |
卷号 | 205期号:4页码:613-617 |
ISSN号 | 0022-0248 |
关键词 | quantum wires InAs/InP molecular beam epitaxy self-organization MOLECULAR-BEAM EPITAXY |
通讯作者 | li hx,duke univ,dept elect & comp engn,durham,nc 27708 usa. |
中文摘要 | the initial inas growth on inp(1 0 0) during molecular beam epitaxy has been investigated. the as-grown islands were shaped like nanowires and formed dense arrays over the entire surface in the 3-6 monolayer inas deposition range. the wires were oriented along the [(1) over bar 1 0] direction. transmission electron microscopy images confirm that the wires are coherently grown on the substrates. our results suggest that the coherent wire-shaped island formation may be a possible method to fabricate self-organized inas nanowires. (c) 1999 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12810] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li HX,Zhuang QD,Kong XW,et al. Self-organization of wire-like InAs nanostructures on InP[J]. journal of crystal growth,1999,205(4):613-617. |
APA | Li HX,Zhuang QD,Kong XW,Wang ZG,&Daniels-Race T.(1999).Self-organization of wire-like InAs nanostructures on InP.journal of crystal growth,205(4),613-617. |
MLA | Li HX,et al."Self-organization of wire-like InAs nanostructures on InP".journal of crystal growth 205.4(1999):613-617. |
入库方式: OAI收割
来源:半导体研究所
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