TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy
文献类型：期刊论文
| 作者 | Han PD
|
| 刊名 | defect and diffusion forum
 |
| 出版日期 | 1999 |
| 卷号 | 174期号:0页码:59-65 |
| ISSN号 | 1012-0386 |
| 关键词 | HREM large-angle stereo-projection misfit dislocations stacking faults TEM LAYER SUPERLATTICES ELECTRON-MICROSCOPY |
| 通讯作者 | |
| 中文摘要 | a znte layer grown on gaas substrate by hot-wall epitaxy (hwe) was studied using transmission electron microscopy (tem). for a (110) cross-sectional specimen, its (001) znte/gaas interface was analysed by large angle stereo-projection (lasp) and high resolution electron microscopy (hrem). in the lasp, a double diffraction occurred and moire fringes were formed, meanwhile misfit dislocations were revealled clearly by weak beam technique. in hrem, not only lomer and 60 degrees types of misfit dislocations were observed, but also two types of stacking faults were analysed. the residual strain was estimated by both methods. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12816]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han PD. TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy[J]. defect and diffusion forum,1999,174(0):59-65. |
| APA | Han PD.(1999).TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy.defect and diffusion forum,174(0),59-65. |
| MLA | Han PD."TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy".defect and diffusion forum 174.0(1999):59-65. |
入库方式： OAI收割
来源：半导体研究所
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