Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | acta physica sinica
 |
| 出版日期 | 1999 |
| 卷号 | 48期号:8页码:1541-1546 |
| 关键词 | THERMAL-ACTIVATION LOCALIZED EXCITONS PHOTOLUMINESCENCE SUPERLATTICES |
| ISSN号 | 1000-3290 |
| 通讯作者 | jiang wh,acad sinica,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we report the structural and optical characteristics of inas quantum dots (qds) grown on gaas (311)a substrates. atomic force microscopic result shows that qds on (311)a surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. the photoluminescence (pl) intensity, peak position and the full width at half maxinum (fwhm) are all closely related to the measurement temperature. the fast redshift of pl energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying qds states. this model explains our results well. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12820]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate[J]. acta physica sinica,1999,48(8):1541-1546. |
| APA | Xu B.(1999).Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate.acta physica sinica,48(8),1541-1546. |
| MLA | Xu B."Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) A substrate".acta physica sinica 48.8(1999):1541-1546. |
入库方式： OAI收割
来源：半导体研究所
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