Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)
文献类型：期刊论文
| 作者 | Si JJ ; Yang QQ ; Teng D ; Wang HJ ; Yu JZ ; Wang QM ; Guo LW ; Zhou JM |
| 刊名 | acta physica sinica
 |
| 出版日期 | 1999 |
| 卷号 | 48期号:9页码:1745-1750 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ROOM-TEMPERATURE GAAS-SURFACES HIGH-INDEX GROWTH INGAAS SUPERLATTICES SI(100) EPITAXY |
| ISSN号 | 1000-3290 |
| 通讯作者 | si jj,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | morphology of self-assembled gesi quantum dot grown on si(113) by si molecular beam epitaxy has been studied by transmission electron microscopy and atomic force microscopy. photoluminescence from the as-grown sample and annealed sample was studied. the results were analyzed and explained. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12826]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Si JJ,Yang QQ,Teng D,et al. Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)[J]. acta physica sinica,1999,48(9):1745-1750. |
| APA | Si JJ.,Yang QQ.,Teng D.,Wang HJ.,Yu JZ.,...&Zhou JM.(1999).Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113).acta physica sinica,48(9),1745-1750. |
| MLA | Si JJ,et al."Morphology and photoluminescence of GeSi self-assembled quantum dot on Si(113)".acta physica sinica 48.9(1999):1745-1750. |
入库方式： OAI收割
来源：半导体研究所
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