中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of defects on optical phonon Raman spectra in SiC nanorods

文献类型:期刊论文

作者Zhang SL ; Zhu BF ; Huang FM ; Yan Y ; Shang EY ; Fan SS ; Han WG
刊名solid state communications
出版日期1999
卷号111期号:11页码:647-651
关键词nanostructures phonons inelastic light scattering SCATTERING SILICON FABRICATION FILMS MODES QUANTUM-WELL WIRES
ISSN号0038-1098
通讯作者zhang sl,beijing univ,dept phys,beijing 100871,peoples r china.
中文摘要fabricated one-dimensional (1d) materials often have abundant structural defects. experimental observation and numerical calculation indicate that the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the raman features of optical phonons in polar semiconductor quantum wires such as sic nanorods, (c) 1999 elsevier science ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12832]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang SL,Zhu BF,Huang FM,et al. Effect of defects on optical phonon Raman spectra in SiC nanorods[J]. solid state communications,1999,111(11):647-651.
APA Zhang SL.,Zhu BF.,Huang FM.,Yan Y.,Shang EY.,...&Han WG.(1999).Effect of defects on optical phonon Raman spectra in SiC nanorods.solid state communications,111(11),647-651.
MLA Zhang SL,et al."Effect of defects on optical phonon Raman spectra in SiC nanorods".solid state communications 111.11(1999):647-651.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。