Binding energy of excitons bound to neutral donors in two-dimensional semiconductors
文献类型：期刊论文
| 作者 | Liu JJ ; Li YX ; Kong XJ ; Li SS |
| 刊名 | chinese physics letters
 |
| 出版日期 | 1999 |
| 卷号 | 16期号:7页码:526-528 |
| 关键词 | GAAS-ALXGA1-XAS QUANTUM-WELLS DIRECT-GAP SEMICONDUCTORS D-CENTERS PHOTOLUMINESCENCE BIEXCITONS |
| ISSN号 | 0256-307x |
| 通讯作者 | liu jj,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the binding energies of excitons bound to neutral donors in two-dimensional (2d) semiconductors within the spherical-effective-mass approximation, which are nondegenerate energy bands, have been calculated by a variational method for a relevant range of the effective electron-to-hole mass ratio sigma. the ratio of the binding energy of a 2d exciton bound to a neutral donor to that of a 2d neutral donor is found to be from 0.58 to 0.10. in the limit of vanishing sigma and large sigma, the results agree fairly well with previous experimental results. the results of this approach are compared with those of earlier theories. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12834]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JJ,Li YX,Kong XJ,et al. Binding energy of excitons bound to neutral donors in two-dimensional semiconductors[J]. chinese physics letters,1999,16(7):526-528. |
| APA | Liu JJ,Li YX,Kong XJ,&Li SS.(1999).Binding energy of excitons bound to neutral donors in two-dimensional semiconductors.chinese physics letters,16(7),526-528. |
| MLA | Liu JJ,et al."Binding energy of excitons bound to neutral donors in two-dimensional semiconductors".chinese physics letters 16.7(1999):526-528. |
入库方式： OAI收割
来源：半导体研究所
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