Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD
文献类型：期刊论文
| 作者 | Sun XL ; Yang H ; Wang YT ; Li GH ; Zheng LX ; Li JB ; Xu DP ; Wang ZG |
| 刊名 | science in china series a-mathematics physics astronomy
 |
| 出版日期 | 1999 |
| 卷号 | 42期号:7页码:763-768 |
| 关键词 | cubic phase GaN hexagonal phase boundary layer EPITAXY PHONONS RAMAN-SPECTROSCOPY |
| ISSN号 | 1006-9283 |
| 通讯作者 | sun xl,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the annealing behavior of the hexagonal phase content in cubic gan (c-gan) thin films grown on gaas (001) by mocvd is reported. c-gan thin films are grown on gaas (001) substrates by metalorganic chemical vapor deposition (mocvd). high temperature annealing is employed to treat the as-grown c-gan thin films. the characterization of the c-gan films is investigated by photoluminescence (pl) and raman scattering spectroscopy. the change conditions of the hexagonal phase content in the metastable c-gan are reported. there is a boundary layer existing in the c-gan/gaas film. when being annealed at high temperature, the intensity of the tob and lob phonon modes from the boundary layer weakens while that of the e-2 phonon mode from the hexagonal phase increases. the content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12842]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun XL,Yang H,Wang YT,et al. Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD[J]. science in china series a-mathematics physics astronomy,1999,42(7):763-768. |
| APA | Sun XL.,Yang H.,Wang YT.,Li GH.,Zheng LX.,...&Wang ZG.(1999).Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD.science in china series a-mathematics physics astronomy,42(7),763-768. |
| MLA | Sun XL,et al."Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD".science in china series a-mathematics physics astronomy 42.7(1999):763-768. |
入库方式： OAI收割
来源：半导体研究所
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