Effect of dopant on the uniformity of InAs self-organized quantum dots
文献类型：期刊论文
| 作者 | Jiang DS ; Wang HL; Wang HL; Wang H; Wang H; Wang HL
|
| 刊名 | acta physica sinica-overseas edition
 |
| 出版日期 | 1999 |
| 卷号 | 8期号:8页码:624-628 |
| 关键词 | INFRARED-ABSORPTION GROWTH GAAS |
| ISSN号 | 1004-423x |
| 通讯作者 | wang hl,chinese acad sci,natl lab superlattices & microstruct,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | low-temperature photoluminescence studies have been performed on si-doped and be-doped self-organized inas/gaas quantum dot (qd) samples to investigate the effect of doping. when si or be is doped into the sample, a remarkable decrease in line-width is observed. we relate this phenomenon to a model that takes the si or be atoms as the nucleation centers for the formation of qds. when si or be is doped, more small uniform quantum dots are formed. the result will be of significance for the application of self-organized inas quantum dots in semiconductor devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12848]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS,Wang HL,Wang HL,et al. Effect of dopant on the uniformity of InAs self-organized quantum dots[J]. acta physica sinica-overseas edition,1999,8(8):624-628. |
| APA | Jiang DS,Wang HL,Wang HL,Wang H,Wang H,&Wang HL.(1999).Effect of dopant on the uniformity of InAs self-organized quantum dots.acta physica sinica-overseas edition,8(8),624-628. |
| MLA | Jiang DS,et al."Effect of dopant on the uniformity of InAs self-organized quantum dots".acta physica sinica-overseas edition 8.8(1999):624-628. |
入库方式： OAI收割
来源：半导体研究所
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