Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 204期号:1-2页码:24-28 |
| 关键词 | self-assembled quantum dots In0.9Al0.1As/InAlAs/InP molecular beam epitaxy VISIBLE LUMINESCENCE ISLANDS PHOTOLUMINESCENCE INP ENSEMBLES INP(001) INGAAS GAAS RADIATIVE RECOMBINATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | sun zz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | inas and in0.9al0.1as self-assembled quantum dots have been grown by stranski-krastanow growth mode on in0.52al0.48as lattice-matched on (0 0 1)inp substrates by mbe. the ternary in0.9al0.1as dots on inp was demonstrated for the first time. the structural and optical properties were characterized using tem and pl, respectively. experimental results show that, a larger critical thickness is required for in0.9al0.1as dots formation than for inas dots, the in0.9al0.1as dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both inas and in0.9al0.1as dots, and in0.9al0.1as dots give narrower luminescence than inas dots. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12854]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)[J]. journal of crystal growth,1999,204(1-2):24-28. |
| APA | Xu B.(1999).Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE).journal of crystal growth,204(1-2),24-28. |
| MLA | Xu B."Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)".journal of crystal growth 204.1-2(1999):24-28. |
入库方式： OAI收割
来源：半导体研究所
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