A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well
文献类型：期刊论文
| 作者 | Kong MY ; Wang XL ; Pan D ; Zeng YP ; Wang J ; Ge WK |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1999 |
| 卷号 | 86期号:3页码:1456-1459 |
| 关键词 | OPTICAL-PROPERTIES CARRIER RELAXATION THERMAL-ACTIVATION LOCALIZED EXCITONS SUPERLATTICES MULTILAYERS STABILITY ISLANDS GROWTH |
| ISSN号 | 0021-8979 |
| 通讯作者 | kong my,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | variable temperature photoluminescence (pl) measurements for in0.3ga0.7as(6 nm)/gaas(34 nm) quantum dot superlattices with a period of 20 and an in0.3ga0.7as(6 nm)/gaas(34 nm) reference single quantum well have been conducted. it is found that the temperature dependence is different between the quantum dots and the reference single quantum well. the pl peak energy of the single quantum well decreases faster than that of the quantum dots with increasing temperature. the pl peak energy for the ingaas/gaas quantum dots closely follows the inas band gap in the temperature range from 11 to 170 k, while the pl peak energy for the ingaas/gaas quantum well closely follows the gaas band gap. in comparison with inas/gaas quantum dots, the ingaas/gaas quantum dots are more typical as a zero-dimensional system since the unusual pl results, which appear in the former, are not obvious for the latter. (c) 1999 american institute of physics. [s0021-8979(99)08615-6]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12856]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Kong MY,Wang XL,Pan D,et al. A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well[J]. journal of applied physics,1999,86(3):1456-1459. |
| APA | Kong MY,Wang XL,Pan D,Zeng YP,Wang J,&Ge WK.(1999).A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well.journal of applied physics,86(3),1456-1459. |
| MLA | Kong MY,et al."A comparison of photoluminescence properties of InGaAs GaAs quantum dots with a single quantum well".journal of applied physics 86.3(1999):1456-1459. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。