Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers
文献类型:期刊论文
作者 | Xu J ; He ZH ; Chen KJ ; Huang XF ; Feng DA ; Han HX ; Wang ZP ; Li GH |
刊名 | applied physics letters
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出版日期 | 1999 |
卷号 | 74期号:25页码:3773-3775 |
关键词 | QUANTUM-CONFINEMENT PHOTOLUMINESCENCE SUPERLATTICES NANOCRYSTALS CRYSTALLITES FILMS |
ISSN号 | 0003-6951 |
通讯作者 | xu j,nanjing univ,state key lab solid state microstruct,nanjing 210093,peoples r china. |
中文摘要 | nanocrystalline ge embedded in amorphous silicon dioxide matrix was fabricated by oxidizing hydrogenated amorphous si/hydrogenated amorphous ge (a-si:h/a-ge:h) multilayers. the structures before and after oxidation were systematically investigated. the orange-green light emission was observed at room temperature and the luminescence peak was located at 2.2 ev. the size dependence in the photoluminescence peak energy was not observed and the luminescence intensity was increased gradually with oxidation time. the origin for this visible light emission is discussed. in contrast to the simple quantum effect model, the surface defect states of nanocrystalline ge are believed to play an important role in radiative recombination process. (c) 1999 american institute of physics. [s0003-6951(99)02425-0]. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12880] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu J,He ZH,Chen KJ,et al. Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers[J]. applied physics letters,1999,74(25):3773-3775. |
APA | Xu J.,He ZH.,Chen KJ.,Huang XF.,Feng DA.,...&Li GH.(1999).Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers.applied physics letters,74(25),3773-3775. |
MLA | Xu J,et al."Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers".applied physics letters 74.25(1999):3773-3775. |
入库方式: OAI收割
来源:半导体研究所
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