中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers

文献类型:期刊论文

作者Xu J ; He ZH ; Chen KJ ; Huang XF ; Feng DA ; Han HX ; Wang ZP ; Li GH
刊名applied physics letters
出版日期1999
卷号74期号:25页码:3773-3775
关键词QUANTUM-CONFINEMENT PHOTOLUMINESCENCE SUPERLATTICES NANOCRYSTALS CRYSTALLITES FILMS
ISSN号0003-6951
通讯作者xu j,nanjing univ,state key lab solid state microstruct,nanjing 210093,peoples r china.
中文摘要nanocrystalline ge embedded in amorphous silicon dioxide matrix was fabricated by oxidizing hydrogenated amorphous si/hydrogenated amorphous ge (a-si:h/a-ge:h) multilayers. the structures before and after oxidation were systematically investigated. the orange-green light emission was observed at room temperature and the luminescence peak was located at 2.2 ev. the size dependence in the photoluminescence peak energy was not observed and the luminescence intensity was increased gradually with oxidation time. the origin for this visible light emission is discussed. in contrast to the simple quantum effect model, the surface defect states of nanocrystalline ge are believed to play an important role in radiative recombination process. (c) 1999 american institute of physics. [s0003-6951(99)02425-0].
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12880]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu J,He ZH,Chen KJ,et al. Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers[J]. applied physics letters,1999,74(25):3773-3775.
APA Xu J.,He ZH.,Chen KJ.,Huang XF.,Feng DA.,...&Li GH.(1999).Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers.applied physics letters,74(25),3773-3775.
MLA Xu J,et al."Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers".applied physics letters 74.25(1999):3773-3775.

入库方式: OAI收割

来源:半导体研究所

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