Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
文献类型：期刊论文
| 作者 | Zhang JP ; Sun DZ ; Li XB ; Wang XL ; Kong MY ; Zeng YP ; Li JM ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 201期号:0页码:429-432 |
| 关键词 | GaN hydrogen contaminant GSMBE Raman spectrum GROWTH STRESS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang jp,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have found that gan epilayers grown by nh3-source molecular beam epitaxy (mbe) contain hydrogen. dependent on the hydrogen concentration, gan on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. furthermore, we notice that background electrons in gan increase with hydrogen incorporation. x-ray photoelectron spectroscopy (xps) measurements of the n1s region indicate that hydrogen is bound to nitrogen. so, the microdefect ga...h-n is an effective nitrogen vacancy in gan, and it may be a donor partly answering for the background electrons. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12896]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JP,Sun DZ,Li XB,et al. Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface[J]. journal of crystal growth,1999,201(0):429-432. |
| APA | Zhang JP.,Sun DZ.,Li XB.,Wang XL.,Kong MY.,...&Lin LY.(1999).Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface.journal of crystal growth,201(0),429-432. |
| MLA | Zhang JP,et al."Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface".journal of crystal growth 201.0(1999):429-432. |
入库方式： OAI收割
来源：半导体研究所
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