Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
文献类型：期刊论文
| 作者 | Peng CS ; Chen H ; Zhao ZY ; Li JH ; Dai DY ; Huang Q ; Zhou JM ; Zhang YH ; Tung CH ; Sheng TT ; Wang J |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 201期号:0页码:530-533 |
| 关键词 | dislocation stacking faults vacancy strain relaxation silicon germanium SI(100) LAYERS FILMS THREADING DISLOCATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | peng cs,chinese acad sci,inst phys,pob 603,beijing 100080,peoples r china. |
| 中文摘要 | we have developed a low-temperature (lt) growth technique. even with ge fraction x upto 90%, the total thickness of fully relaxed gexsi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). the surface roughness is no more than 6 nm. the strain relaxation is quite inhomogeneous from the beginning. stacking faults generate and form the mismatch dislocations in the interface of gesi/lt-si. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12898]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Peng CS,Chen H,Zhao ZY,et al. Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers[J]. journal of crystal growth,1999,201(0):530-533. |
| APA | Peng CS.,Chen H.,Zhao ZY.,Li JH.,Dai DY.,...&Wang J.(1999).Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers.journal of crystal growth,201(0),530-533. |
| MLA | Peng CS,et al."Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers".journal of crystal growth 201.0(1999):530-533. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。