Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes
文献类型：期刊论文
| 作者 | Liu XF
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 201期号:0页码:551-555 |
| 关键词 | reverse leakage current crystalline quality SiGe Se p-n heterojunction diodes LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu xf,chinese acad sci,inst semicond,mat ctr,beijing 100083,peoples r china. |
| 中文摘要 | double-crystal x-ray diffraction and i-v characterization have been carried out on the gsmbe grown sige/si p-n heterojunction materials. results show that the sige alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. the crystal perfection and/or the degree of metastability of the sice alloys have been estimated in terms of the model proposed by tsao with the experimental results. high-quality p-n heterojunction diodes can be obtained by optimizing the sige alloy structures, which limit the alloys in the metastable states. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12900]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu XF. Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes[J]. journal of crystal growth,1999,201(0):551-555. |
| APA | Liu XF.(1999).Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes.journal of crystal growth,201(0),551-555. |
| MLA | Liu XF."Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes".journal of crystal growth 201.0(1999):551-555. |
入库方式： OAI收割
来源：半导体研究所
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