The effects of carbonized buffer layer on the growth of SiC on Si
文献类型：期刊论文
| 作者 | Wang YS ; Li JM ; Zhang FF ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 201期号:0页码:564-567 |
| 关键词 | Si SiC carbonization RHEED single crystal epilayer HYDROCARBON RADICALS SI(001) SURFACE BEAM HETEROEPITAXIAL GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang ys,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | carbonized buffer layers were formed with c2h4 on si(100) and si(111) substrates using different methods and sic epilayers were grown on each buffer layer at 1050 degrees c with simultaneous supply of c2h4 and si2h6. the structure of carbonized and epitaxy layers was analyzed with in situ rheed. the buffer layers formed at 800 degrees c were polycrystalline on both si(100) and si(111) substrates whereas they were single crystals, with twins on si(100) and without tu ins on si(111)substrates. when formed with a gradual rise in substrate temperature from 300 degrees c to growth temperature. raising the substrate temperature slowly results in the formation of more twins. epilayers grown on carbonized polycrystalline lavers are polycrystalline. single crystal epilayers without twins grow on single crystalline buffer layers without twins or with a few twins. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12904]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang YS,Li JM,Zhang FF,et al. The effects of carbonized buffer layer on the growth of SiC on Si[J]. journal of crystal growth,1999,201(0):564-567. |
| APA | Wang YS,Li JM,Zhang FF,&Lin LY.(1999).The effects of carbonized buffer layer on the growth of SiC on Si.journal of crystal growth,201(0),564-567. |
| MLA | Wang YS,et al."The effects of carbonized buffer layer on the growth of SiC on Si".journal of crystal growth 201.0(1999):564-567. |
入库方式： OAI收割
来源：半导体研究所
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