Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 203期号:1-2页码:40-44 |
| 关键词 | AlGaN cubic hexagonal SEM MOVPE GAAS GAN |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china. |
| 中文摘要 | cubic algan films were grown on gaas(100) substrates by movpe. scanning electron microscope and photoluminescence were used to analyze the surface morphology and the crystalline quality of the epitaxial layers. we found that both nh, and tega fluxes have a strong effect on the surface morphology of algan films. a model for the lateral growth mechanism is presented to qualitatively explain this effect. the content of hexagonal algan in the cubic algan films was also related to the nh3 flux. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12908]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)[J]. journal of crystal growth,1999,203(1-2):40-44. |
| APA | Zhao DG.(1999).Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE).journal of crystal growth,203(1-2),40-44. |
| MLA | Zhao DG."Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)".journal of crystal growth 203.1-2(1999):40-44. |
入库方式： OAI收割
来源：半导体研究所
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