Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of electronic materials
 |
| 出版日期 | 1999 |
| 卷号 | 28期号:5页码:528-531 |
| 关键词 | bimodal distribution photoluminescence (PL) quantum-size effect ENSEMBLES SI(100) GROWTH SHAPE GE |
| ISSN号 | 0361-5235 |
| 通讯作者 | zhou w,chinese acad sci,lab semicond mat sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | red-emission at similar to 640 nm from self-assembled in0.55al0.45as/al0.5ga0.5as quantum dots grown on gaas substrate by molecular beam epitaxy (mbe) has been demonstrated. we obtained a double-peak structure of photoluminescence (pl) spectra from quantum dots. an atomic force micrograph (afm) image for uncapped sample also shows a bimodal distribution of dot sizes. from the temperature and excitation intensity dependence of pl spectra, we found that the double-peak structure of pl spectra from quantum dots was strongly correlated to the two predominant quantum dot families. taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the afm image. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12914]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)[J]. journal of electronic materials,1999,28(5):528-531. |
| APA | Xu B.(1999).Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001).journal of electronic materials,28(5),528-531. |
| MLA | Xu B."Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)".journal of electronic materials 28.5(1999):528-531. |
入库方式： OAI收割
来源：半导体研究所
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