Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:1-2页码:70-76 |
| 关键词 | InAs quantum dots self-assembly molecular beam epitaxy GaAs (3 1 1)A photoluminesence TEMPERATURE-DEPENDENCE THERMAL-ACTIVATION LOCALIZED EXCITONS ORIENTED GAAS PHOTOLUMINESCENCE MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu hz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | structural and optical investigations of inas qds grown on gaas (3 1 1)a by molecular beam epitaxy (mbe) were reported. inas/gaas (3 1 1)a qds with nonconventional, faceted, arrowhead-like shapes aligned in the [ - 2 3 3] direction have been disclosed by afm image. low defect and dislocation density on the qds interfaces were indicated by the linear dependence of photoluminescence (pl) intensity on the excitation power. the fast red shift of pl energy and the monotonic decrease of fwhm with increasing temperature were observed and explained by carriers being thermally activated to the energy barrier produced by the wetting layer and then retrapped and recombined in energetically low-lying qds states. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12928]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates[J]. journal of crystal growth,1999,200(1-2):70-76. |
| APA | Xu B.(1999).Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates.journal of crystal growth,200(1-2),70-76. |
| MLA | Xu B."Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates".journal of crystal growth 200.1-2(1999):70-76. |
入库方式： OAI收割
来源：半导体研究所
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