Structural and optical characterization of InAs nanostructures grown on high-index InP substrates
文献类型：期刊论文
| 作者 | Li HX ; Daniels-Race T ; Wang ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:1-2页码:321-325 |
| 关键词 | MOLECULAR-BEAM EPITAXY VAPOR-PHASE EPITAXY QUANTUM DOTS INP(001) SURFACE ISLANDS |
| ISSN号 | 0022-0248 |
| 通讯作者 | li hx,duke univ,dept elect & comp engn,durham,nc 27708 usa. |
| 中文摘要 | the structural and optical properties of inas layers grown on high-index inp surfaces by molecular beam epitaxy are investigated in order to understand the self-organization of quantum dots and quantum wires on novel index surfaces. four different inp substrate orientations have been examined, namely, (1 1 1)b, (3 1 1)a, and (3 1 1)b and (1 0 0). a rich variety of inas nanostructures is formed on the surfaces. quantum wire-like morphology is observed on the (1 0 0) surface, and evident island formation is found on (1 1 1)a and (3 1 1)b by atomic force microscopy. the photoluminescence spectra of inp (1 1 1)a and (3 1 1)b samples show typical qd features with pl peaks in the wavelength range 1.3-1.55 mu m with comparable efficiency. these results suggest that the high-index substrates are promising candidates for production of high-quality self-organized qd materials for device applications. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12930]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li HX,Daniels-Race T,Wang ZG. Structural and optical characterization of InAs nanostructures grown on high-index InP substrates[J]. journal of crystal growth,1999,200(1-2):321-325. |
| APA | Li HX,Daniels-Race T,&Wang ZG.(1999).Structural and optical characterization of InAs nanostructures grown on high-index InP substrates.journal of crystal growth,200(1-2),321-325. |
| MLA | Li HX,et al."Structural and optical characterization of InAs nanostructures grown on high-index InP substrates".journal of crystal growth 200.1-2(1999):321-325. |
入库方式： OAI收割
来源：半导体研究所
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