Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures
文献类型：期刊论文
| 作者 | Zhuang QD ; Li JM ; Zeng YP ; Pan L ; Li HX ; Kong MY ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:3-4页码:375-381 |
| 关键词 | InGaAs/GaAs quantum dots superlattice structure TEM X-ray ISLANDS GROWTH GAAS MULTILAYERS SURFACES X-RAY-DIFFRACTION |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhuang qd,chinese acad sci,inst semicond,novel mat ctr,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | ingaas/gaas quantum dots (qds) superlattice grown by molecular beam epitaxy (mbe) at different substrate temperatures for fabricating 8-12 mu m infrared photodetector were characterized by transmission electron microscopy (tem), double-crystal x-ray diffraction (dcxrd) and photoluminescence (pl). high-quality qds superlattice can be achieved by higher growth temperature. cross-sectional tem shows the qds in the successive layers are vertically aligned along growth direction. interaction of partial vertically aligned columns leads to a perfect vertical ordering. with increasing number of bilayers, the average qds size becomes larger in height and rapidly saturates at a certain value, while average lateral length nearly preserves initial size. this change leads to the formation of qds homogeneous in size and of a particular shape. the observed self-organizations are attributed to the effect of strain distribution at qds on the kinetic growth process. dcxrd measurement shows two sets of satellite peaks which corresponds to qds superlattice and multi quantum wells formed by the wetting layers. kinematical simulations of the wetting layers indicate that the formation of qds is associated with a decrease of the effective indium content in the wetting layers. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12932]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhuang QD,Li JM,Zeng YP,et al. Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures[J]. journal of crystal growth,1999,200(3-4):375-381. |
| APA | Zhuang QD.,Li JM.,Zeng YP.,Pan L.,Li HX.,...&Lin LY.(1999).Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures.journal of crystal growth,200(3-4),375-381. |
| MLA | Zhuang QD,et al."Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures".journal of crystal growth 200.3-4(1999):375-381. |
入库方式： OAI收割
来源：半导体研究所
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