Si doping effect on self-organized InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Zhao Q ; Feng SL ; Ning D ; Zhu HJ ; Wang ZM ; Deng YM |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:3-4页码:603-607 |
| 关键词 | self-organized quantum dots InAs/GaAs scanning probe microscopy doping effect INAS GROWTH GAAS GAAS(001) ISLANDS ATOMIC-FORCE MICROSCOPE |
| ISSN号 | 0022-0248 |
| 通讯作者 | feng sl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in situ ultra high vacuum scanning probe microscopy (spm) and low-temperature :photoluminescence (pl) studies have been performed on si-doped self-organized inas/gaas quantum dots samples to investigate the si doping effects. remarkably, when si is doped in the sample, according to the spm images, more small dots are formed when compared with images from undoped samples. on the pl spectra, high-energy band tail which correspond to the small dots appear, with increasing doping concentration, the integral intensity of the high-energy band tail account for the whole peak increase too. we relate this phenomenon to a model that takes the si atom as the nucleation center for qds formation. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12934]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Q,Feng SL,Ning D,et al. Si doping effect on self-organized InAs/GaAs quantum dots[J]. journal of crystal growth,1999,200(3-4):603-607. |
| APA | Zhao Q,Feng SL,Ning D,Zhu HJ,Wang ZM,&Deng YM.(1999).Si doping effect on self-organized InAs/GaAs quantum dots.journal of crystal growth,200(3-4),603-607. |
| MLA | Zhao Q,et al."Si doping effect on self-organized InAs/GaAs quantum dots".journal of crystal growth 200.3-4(1999):603-607. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。