Substrate surface atomic structure influence on the growth of InAlAs quantum dots
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:3-4页码:608-612 |
| 关键词 | photoluminescence atomic-terminated surface quantum dots MOLECULAR-BEAM EPITAXY VISIBLE PHOTOLUMINESCENCE MONOLAYER COVERAGE INAS GAAS GE INXGA1-XAS ENSEMBLES GAAS(100) 3-DIMENSIONAL ISLAND FORMATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhou w,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have examined the influence of substrate surface orientation on self-assembled inalas/algaas quantum dots grown on (0 0 1) and (n 1 1) a/b (n = 3, 5) gaas substrates by molecular beam epitaxy (mbe). preliminary characterizations have been performed using photoluminescence (pl) and transmission electron microscopy (tem). the pl emission energies of quantum dots on high miller index surface are found to be strongly dependent on the atomic-terminated surface (a or b surface) of the substrate. we observed that there were planar ordering larger islands on (3 1 1)b surface compared to (0 0 1) surface, in contrast, a rough interface and smaller "grains" on (3 1 1)a surface, this result is identical with pl emission energy from these islands. we propose that the rapid strain-induced surface "roughening" impedes the formation of 3d islands on a surface, and indicating that this is a promising approach of the realization of ordering distribution on (3 1 1)b plane for devices such as red-emitting semiconductor quantum dots lasers. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12936]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Substrate surface atomic structure influence on the growth of InAlAs quantum dots[J]. journal of crystal growth,1999,200(3-4):608-612. |
| APA | Xu B.(1999).Substrate surface atomic structure influence on the growth of InAlAs quantum dots.journal of crystal growth,200(3-4),608-612. |
| MLA | Xu B."Substrate surface atomic structure influence on the growth of InAlAs quantum dots".journal of crystal growth 200.3-4(1999):608-612. |
入库方式： OAI收割
来源：半导体研究所
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