High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
文献类型：期刊论文
| 作者 | Liu JP ; Huang DD ; Li JP ; Sun DZ ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:3-4页码:613-616 |
| 关键词 | Si low-temperature epitaxy P doping surface morphology morphological evolution DEPOSITION |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | uniform and high phosphorous doping has been demonstrated during si growth by gsmbe using disilane and phosphine. the p-n diodes, which consist of a n-si layer and a p-sige layer grown on si substrate, show a normal i-v characteristic. a roughening transition during p-doped si growth is found. ex situ sem results show that thinner film is specular. when the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. the average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. no extended defects are found at the substrate interface or in the epilayer. possible causes for the morphological evolution are discussed. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12938]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Huang DD,Li JP,et al. High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)[J]. journal of crystal growth,1999,200(3-4):613-616. |
| APA | Liu JP,Huang DD,Li JP,Sun DZ,&Kong MY.(1999).High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE).journal of crystal growth,200(3-4),613-616. |
| MLA | Liu JP,et al."High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)".journal of crystal growth 200.3-4(1999):613-616. |
入库方式： OAI收割
来源：半导体研究所
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