Evolution of height distribution of Ge islands on Si(1 0 0)
文献类型：期刊论文
| 作者 | Liu JP ; Gong Q ; Huang DD ; Li JP ; Sun DZ ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 200期号:3-4页码:617-620 |
| 关键词 | Ge islands Ge films bimodal distribution Ehrlich-Schwoebel barriers SI(001) HETEROEPITAXIAL GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | evolution of the height distribution of ge islands during in situ annealing of ge films on si(1 0 0) has been studied. island height is found to have a bimodal distribution. the standard deviation of the island height divided by the mean island height, for the mode of larger island size is more than that for the other mode. we suggest that the presence of ehrlich-schwoebel barriers, combined with the misfit strain, can lead to the bimodal distribution of island size, the mode of larger island size having narrower base size distribution, but wider height distribution for ge islands on si(1 0 0). the bimodal distribution of island size could be stable due to kinetics without necessarily regarding it as minimum-energy configuration. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12940]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Gong Q,Huang DD,et al. Evolution of height distribution of Ge islands on Si(1 0 0)[J]. journal of crystal growth,1999,200(3-4):617-620. |
| APA | Liu JP,Gong Q,Huang DD,Li JP,Sun DZ,&Kong MY.(1999).Evolution of height distribution of Ge islands on Si(1 0 0).journal of crystal growth,200(3-4),617-620. |
| MLA | Liu JP,et al."Evolution of height distribution of Ge islands on Si(1 0 0)".journal of crystal growth 200.3-4(1999):617-620. |
入库方式： OAI收割
来源：半导体研究所
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