Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu JP ; Huang DD ; Li JP ; Lin YX ; Sun DZ ; Kong MY |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1999 |
| 卷号 | 85期号:9页码:6920-6922 |
| 关键词 | GAS-SOURCE MBE KINETICS ADSORPTION SILICON SI(100) MECHANISM SI2H6 PHASE FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | liu jp,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the ge incorporation rate during low-temperature growth of si1-xgex by disilane and solid-ge molecular beam epitaxy, based on enhanced hydrogen desorption from si sites due to the presence of ge atoms. the hydrogen desorption rate constant for disilane on si sites is fitted to an exponential function of ge incorporation rate and a possible physical explanation is discussed. simulated results are in excellent agreement with experimental data. (c) 1999 american institute of physics. [s0021-8979(99)02109-x]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12946]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Huang DD,Li JP,et al. Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy[J]. journal of applied physics,1999,85(9):6920-6922. |
| APA | Liu JP,Huang DD,Li JP,Lin YX,Sun DZ,&Kong MY.(1999).Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy.journal of applied physics,85(9),6920-6922. |
| MLA | Liu JP,et al."Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy".journal of applied physics 85.9(1999):6920-6922. |
入库方式： OAI收割
来源：半导体研究所
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