Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions
文献类型：期刊论文
| 作者 | Ho WY ; Fong WK ; Surya C ; Tong KY ; Lu LW ; Ge WK |
| 刊名 | mrs internet journal of nitride semiconductor research
 |
| 出版日期 | 1999 |
| 卷号 | 4期号:0页码:art.no.g6.4 |
| 关键词 | FLUCTUATIONS QUALITY DIODES |
| ISSN号 | 1092-5783 |
| 通讯作者 | ho wy,hong kong polytech univ,dept elect engn,hong kong,peoples r china. 电子邮箱地址: ensurya@polyu.edu.hk |
| 中文摘要 | we report experiments on hot-electron stressing in commercial iii-v nitride based heterojunction fight-emitting diodes. stressing currents ranging from 100 ma to 200 ma were used. degradations in the device properties were investigated through detailed studies of the i-v characteristics, electroluminescence, deep-level transient fourier spectroscopy and flicker noise. our experimental data demonstrated significant distortions in the i-v characteristics. the room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. concentration of the deep-levels was examined by measuring the deep-level transient fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.21 x 10(13) cm(-3) at e-1 = e-c - 1.1ev. the result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12954]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ho WY,Fong WK,Surya C,et al. Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions[J]. mrs internet journal of nitride semiconductor research,1999,4(0):art.no.g6.4. |
| APA | Ho WY,Fong WK,Surya C,Tong KY,Lu LW,&Ge WK.(1999).Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions.mrs internet journal of nitride semiconductor research,4(0),art.no.g6.4. |
| MLA | Ho WY,et al."Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions".mrs internet journal of nitride semiconductor research 4.0(1999):art.no.g6.4. |
入库方式： OAI收割
来源：半导体研究所
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