Effect of growth interruption on the optical properties of InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Lu ZD ; Xu JZ ; Zheng BZ ; Xu ZY ; Ge WK |
| 刊名 | solid state communications
 |
| 出版日期 | 1999 |
| 卷号 | 109期号:10页码:649-653 |
| 关键词 | semiconductors optical properties luminescence CONFIGURATION LUMINESCENCE WELLS TIME |
| ISSN号 | 0038-1098 |
| 通讯作者 | xu zy,chinese acad sci,inst semicond,nlsm,beijing 100083,peoples r china. |
| 中文摘要 | the effect of growth interruption (gi) on the optical properties of inas/gaas quantum dots was investigated by cw and time-resolved photoluminescence (pl). it is found that this effect depends very much on the growth conditions, in particular, the growth rate. in the case of low growth rate, we have found that the gi may introduce either red-shift or blue-shift in pl with increase of the interruption lime, depending on the inas thickness. the observed red shift in our 1.7 monolayer (ml) sample is attributed to the evolution of the inas islands during the growth interruption. while the blue-shift in the 3 ml sample is suggested to be mainly caused by the strain effect. in addition, nearly zero shift was observed for the sample with thickness around 2.5 ml, (c) 1999 elsevier science ltd. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12956]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu ZD,Xu JZ,Zheng BZ,et al. Effect of growth interruption on the optical properties of InAs/GaAs quantum dots[J]. solid state communications,1999,109(10):649-653. |
| APA | Lu ZD,Xu JZ,Zheng BZ,Xu ZY,&Ge WK.(1999).Effect of growth interruption on the optical properties of InAs/GaAs quantum dots.solid state communications,109(10),649-653. |
| MLA | Lu ZD,et al."Effect of growth interruption on the optical properties of InAs/GaAs quantum dots".solid state communications 109.10(1999):649-653. |
入库方式： OAI收割
来源：半导体研究所
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