High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere
文献类型：期刊论文
| 作者 | Pajot B ; Clerjaud B ; Xu ZJ |
| 刊名 | physical review b
 |
| 出版日期 | 1999 |
| 卷号 | 59期号:11页码:7500-7506 |
| 关键词 | ION-IMPLANTED SILICON UNIAXIAL-STRESS ABSORPTION NITROGEN DEFECT GERMANIUM COMPLEXES OXYGEN LEVEL BANDS |
| ISSN号 | 0163-1829 |
| 通讯作者 | pajot b,univ denis diderot,umr 7588,gps,2 pl jussieu,f-75251 paris 05,france. |
| 中文摘要 | high-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a h-2 or d-2 atmosphere. the highest-frequency ones are due to the overtones and combination modes of sih fundamentals. others are ch modes due to (c,h) complexes, but the simultaneous presence of nh modes due to (n,h) complexes cannot be excluded. the present results seem to show also the existence of centers including both sih and ch or nh bonds. one sharp mode at 4349 cm-l is related to a weak sih fundamental at 2210 cm(-1). the related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor c atom. [s0163-1829(99)00911-x]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12958]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pajot B,Clerjaud B,Xu ZJ. High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere[J]. physical review b,1999,59(11):7500-7506. |
| APA | Pajot B,Clerjaud B,&Xu ZJ.(1999).High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere.physical review b,59(11),7500-7506. |
| MLA | Pajot B,et al."High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere".physical review b 59.11(1999):7500-7506. |
入库方式： OAI收割
来源：半导体研究所
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