A Raman scattering study of GaAs: As films lifted off GaAs substrate
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 1999 |
| 卷号 | 32期号:6页码:629-631 |
| 关键词 | TEMPERATURE-GROWN GAAS |
| ISSN号 | 0022-3727 |
| 通讯作者 | jiang ds,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we performed raman scattering investigations on low-temperature-grown (ltg) films of gaas that had been lifted off the gaas substrate. the raman measurements unambiguously show the effects of excess arsenic on phonon scattering from ltg films of gaas. the larger downwards shift of the lo phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. the raman signal due to precipitates of elemental arsenic in the annealed gaas : as films is determined. it is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad raman peak in the range 180-260 cm(-1). |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12960]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. A Raman scattering study of GaAs: As films lifted off GaAs substrate[J]. journal of physics d-applied physics,1999,32(6):629-631. |
| APA | Jiang DS.(1999).A Raman scattering study of GaAs: As films lifted off GaAs substrate.journal of physics d-applied physics,32(6),629-631. |
| MLA | Jiang DS."A Raman scattering study of GaAs: As films lifted off GaAs substrate".journal of physics d-applied physics 32.6(1999):629-631. |
入库方式： OAI收割
来源：半导体研究所
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