中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A Raman scattering study of GaAs: As films lifted off GaAs substrate

文献类型:期刊论文

作者Jiang DS
刊名journal of physics d-applied physics
出版日期1999
卷号32期号:6页码:629-631
关键词TEMPERATURE-GROWN GAAS
ISSN号0022-3727
通讯作者jiang ds,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要we performed raman scattering investigations on low-temperature-grown (ltg) films of gaas that had been lifted off the gaas substrate. the raman measurements unambiguously show the effects of excess arsenic on phonon scattering from ltg films of gaas. the larger downwards shift of the lo phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. the raman signal due to precipitates of elemental arsenic in the annealed gaas : as films is determined. it is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad raman peak in the range 180-260 cm(-1).
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12960]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Jiang DS. A Raman scattering study of GaAs: As films lifted off GaAs substrate[J]. journal of physics d-applied physics,1999,32(6):629-631.
APA Jiang DS.(1999).A Raman scattering study of GaAs: As films lifted off GaAs substrate.journal of physics d-applied physics,32(6),629-631.
MLA Jiang DS."A Raman scattering study of GaAs: As films lifted off GaAs substrate".journal of physics d-applied physics 32.6(1999):629-631.

入库方式: OAI收割

来源:半导体研究所

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