Room-temperature microwave oscillation in AlAs/GaAs superlattices
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 1999 |
| 卷号 | 4期号:2页码:137-141 |
| 关键词 | superlattices microwave oscillation BARRIERS DOMAIN STATES GAAS-ALAS HETEROSTRUCTURES |
| ISSN号 | 1386-9477 |
| 通讯作者 | wu jq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. 电子邮箱地址: jqwu@red.semi.ac.cn |
| 中文摘要 | room-temperature microwave (mw) oscillations are observed in gaas/alas (10 nm/2 nm) doped weakly coupled superlattices (sls) in the first plateau of the i-v curve. oscillations induced by sequential resonant tunneling are detected in a temperature range from 15 to 300 k by applying dc bias on the si, diodes. the temperature dependence of current at small fixed bias voltage is also measured. through analysis, it is found that the dominant transport mechanisms are sequential resonant tunneling and phonon-assisted tunneling when the temperature is below 300 k. the low bias voltage at which oscillations are realized is helpful to restrain thermionic emission through the x valley of alas barriers in the room-temperature transport. (c) 1999 published by elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12962]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Room-temperature microwave oscillation in AlAs/GaAs superlattices[J]. physica e-low-dimensional systems & nanostructures,1999,4(2):137-141. |
| APA | Jiang DS.(1999).Room-temperature microwave oscillation in AlAs/GaAs superlattices.physica e-low-dimensional systems & nanostructures,4(2),137-141. |
| MLA | Jiang DS."Room-temperature microwave oscillation in AlAs/GaAs superlattices".physica e-low-dimensional systems & nanostructures 4.2(1999):137-141. |
入库方式： OAI收割
来源：半导体研究所
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