Photoluminescence properties of nitrogen-doped ZnSe epilayers
文献类型：期刊论文
| 作者 | Zhu ZM ; Liu NZ ; Li GH ; Han HX ; Wang ZP ; Wang SZ ; He L ; Ji RB ; Wu Y |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 1999 |
| 卷号 | 18期号:1页码:13-18 |
| 关键词 | ZnSe : N photoluminescence hound exciton P-TYPE ZNSE TEMPERATURE-DEPENDENCE LASER-DIODES LUMINESCENCE ACCEPTORS MOLECULAR-BEAM EPITAXY |
| ISSN号 | 1001-9014 |
| 通讯作者 | zhu zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the photoluminescence (pl) properties of nitrogen-doped znse epilayers grown on semi-insulating gaas(100) substrates by mbe using a rf-plasma source for n doping were investigated. the pl peak which can be related to n acceptor was observed in the pl spectra of znse:n smaples. at 10k, as the excitation power density increases, the energy of donor-acceptor pair(dap) emission shows a blue-shift and its intensity tends to saturate. as the temperature increases over a range from 10k to 300k, the relative pl intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12980]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu ZM,Liu NZ,Li GH,et al. Photoluminescence properties of nitrogen-doped ZnSe epilayers[J]. journal of infrared and millimeter waves,1999,18(1):13-18. |
| APA | Zhu ZM.,Liu NZ.,Li GH.,Han HX.,Wang ZP.,...&Wu Y.(1999).Photoluminescence properties of nitrogen-doped ZnSe epilayers.journal of infrared and millimeter waves,18(1),13-18. |
| MLA | Zhu ZM,et al."Photoluminescence properties of nitrogen-doped ZnSe epilayers".journal of infrared and millimeter waves 18.1(1999):13-18. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。