Radiative transition in delta-doped GaAs superlattices
文献类型：期刊论文
| 作者 | Tan PH
|
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 1999 |
| 卷号 | 18期号:1页码:89-92 |
| 关键词 | delta-doping superlattices radiative transition SI BAND-GAP |
| ISSN号 | 1001-9014 |
| 通讯作者 | cheng wc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | radiative transition in delta-doped gaas superlattices with a weak coupling was investigted at low temperature, the experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. comparing the experiment with theory, a good agreement was abtained. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12982]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH. Radiative transition in delta-doped GaAs superlattices[J]. journal of infrared and millimeter waves,1999,18(1):89-92. |
| APA | Tan PH.(1999).Radiative transition in delta-doped GaAs superlattices.journal of infrared and millimeter waves,18(1),89-92. |
| MLA | Tan PH."Radiative transition in delta-doped GaAs superlattices".journal of infrared and millimeter waves 18.1(1999):89-92. |
入库方式： OAI收割
来源：半导体研究所
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