Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 197期号:4页码:789-793 |
| 关键词 | self-assembled island size quantization effect molecular beam epitaxy EXCITED-STATES GROWTH PHOTOLUMINESCENCE QUANTUM DOTS |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu fq,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence spectroscopy has been used to investigate self-assembled inas islands in inalas grown on inp(0 0 1) by molecular beam epitaxy, in correlation with transmission electron microscopy. the nominal deposition of 3.6 monolayers of inas at 470 degrees c achieves the onset stage of coherent island formation. in addition to one strong emission around 0.74 ev, the sample displaces several emission peaks at 0.87, 0.92. 0.98, and 1.04 ev. fully developed islands that coexist with semi-finished disk islands account for the multipeak emission. these results provide strong evidence of size quantization effects in inas islands. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12984]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition[J]. journal of crystal growth,1999,197(4):789-793. |
| APA | Xu B.(1999).Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition.journal of crystal growth,197(4),789-793. |
| MLA | Xu B."Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition".journal of crystal growth 197.4(1999):789-793. |
入库方式： OAI收割
来源：半导体研究所
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