In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | applied surface science
 |
| 出版日期 | 1999 |
| 卷号 | 141期号:1-2页码:101-106 |
| 关键词 | quantum dot array InxGa1-xAs self-assembly molecular beam epitaxy GaAs (311)B high-index surface structure CHEMICAL-VAPOR-DEPOSITION SELF-ORGANIZATION PHASE EPITAXY INAS SURFACES MICROSTRUCTURES GAAS(100) ALIGNMENT MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0169-4332 |
| 通讯作者 | xu hz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. 电子邮箱地址: hzxu@red.semi.ac.cn |
| 中文摘要 | self-assembled inxga1-xas quantum dots (qds) on (311)a/b gaas surfaces have been grown by molecular beam epitaxy (mbe). spontaneously ordering alignment of inxga1-xas with lower in content around 0.3 have been observed. the direction of alignment orientation of the qds formation differs from the direction of misorientation of the (311)b surface, and is strongly dependent upon the in content x. the ordering alignment become significantly deteriorated as the in content is increased to above 0.5 or as the qds are formed on (100) or (311)a substrates. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12986]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates[J]. applied surface science,1999,141(1-2):101-106. |
| APA | Xu B.(1999).In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates.applied surface science,141(1-2),101-106. |
| MLA | Xu B."In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates".applied surface science 141.1-2(1999):101-106. |
入库方式： OAI收割
来源：半导体研究所
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