Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li HX ; Daniels-Race T ; Wang ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 1999 |
| 卷号 | 74期号:10页码:1388-1390 |
| 关键词 | MICROSTRUCTURAL EVOLUTION ISLAND FORMATION INXGA1-XAS SI(100) GAAS GE |
| ISSN号 | 0003-6951 |
| 通讯作者 | li hx,duke univ,dept elect & comp engn,durham,nc 27708 usa. 电子邮箱地址: hxli@ee.duke.edu |
| 中文摘要 | growth mode and strain relaxation of molecular-beam-epitaxy grown inas/inalas/inp (111)a system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. in direct contrast to the well-studied inas/gaas system, our experimental results show that the inas grown on inalas/inp (111)a follows the stranski-krastanov mode. both self-organized inas quantum dots and relaxed inas islands are formed depending on the inas coverage. intense luminescence signals from both the inas quantum dots and wetting layer are observed. the luminescence efficiency of (111)a samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on inp (111)a surfaces. (c) 1999 american institute of physics. [s0003-6951(99)01010-4]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12988]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li HX,Daniels-Race T,Wang ZG. Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy[J]. applied physics letters,1999,74(10):1388-1390. |
| APA | Li HX,Daniels-Race T,&Wang ZG.(1999).Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy.applied physics letters,74(10),1388-1390. |
| MLA | Li HX,et al."Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy".applied physics letters 74.10(1999):1388-1390. |
入库方式： OAI收割
来源：半导体研究所
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