InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 197期号:1-2页码:95-98 |
| 关键词 | quantum wires layer-order-orientation CONFINEMENT STRAIN |
| ISSN号 | 0022-0248 |
| 通讯作者 | wu j,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | quantum wires were formed in the 6-period inas/in0.52al0.48as structure on inp(0 0 1) grown by molecular beam epitaxy. the structure was characterized with transmission electron microscopy. it was found that the lateral periodic compositional modulation in the qwr array was in the [1 (1) over bar 0] direction and layer-ordered along the specific orientation deviating from the [0 0 1] growth direction by about 30 degrees. this deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12998]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)[J]. journal of crystal growth,1999,197(1-2):95-98. |
| APA | Xu B.(1999).InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001).journal of crystal growth,197(1-2),95-98. |
| MLA | Xu B."InAs/ln(0.52)Al(0.48)As quantum wire structure with the specific layer-ordering orientation on InP(001)".journal of crystal growth 197.1-2(1999):95-98. |
入库方式： OAI收割
来源：半导体研究所
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