p-type co-doping study of GaN by photoluminescence
文献类型：期刊论文
| 作者 | Zhang JP ; Sun DZ ; Wang XL ; Kong MY ; Zeng YP ; Li JM ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1999 |
| 卷号 | 197期号:1-2页码:368-371 |
| 关键词 | p-type co-doping photoluminescence acceptor ionization energy IMPLANTED GAN TRANSITIONS ENERGY GALLIUM NITRIDE |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang jp,chinese acad sci,inst semicond,novel mat ctr,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence measurements were performed on p-type co-doping effects of c, as, and mg in gan. the dopants were incorporated into gan by ion implantation performed at 77 k. we find that the 3.42 ev luminescence line is sensitive to hole concentration, and propose that after cartful calibration the 3.42 ev line may be used as a probe to measure hole concentration in gan. simply doping one kind of accepters will not result in holes, while co-doping can substantially improve p-type doping efficiency. as + c and as + mg co-doping induce an acceptor level of 180 mev above the valence band. mg + c co-doping is the most promising method for p-type doping, the related acceptor level is determined to be as shallow as 130 mev. the improvement of the doping efficiency by co-doping is probably due to the decrease of the acceptor ionization energy. (c) 1999 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13000]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JP,Sun DZ,Wang XL,et al. p-type co-doping study of GaN by photoluminescence[J]. journal of crystal growth,1999,197(1-2):368-371. |
| APA | Zhang JP.,Sun DZ.,Wang XL.,Kong MY.,Zeng YP.,...&Lin LY.(1999).p-type co-doping study of GaN by photoluminescence.journal of crystal growth,197(1-2),368-371. |
| MLA | Zhang JP,et al."p-type co-doping study of GaN by photoluminescence".journal of crystal growth 197.1-2(1999):368-371. |
入库方式： OAI收割
来源：半导体研究所
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